NPT1012 page 1 features ? optimized for broadband operation from dc-4000mhz ? 25w p 3db cw power at 3000mhz ? 16-20w p 3db cw power from 1000-2500mhz in application board with >45% drain effciency ? 10-20w p 3db cw power from 30-1000mhz in ap - plication board with >50% drain effciency ? high effciency from 14 - 28v ? 4.0 c/w r th with maximum t j rating of 200 c ? robust up to 10:1 vswr mismatch at all angles with no device damage at 90 c fange ? subject to ear99 export control dc C 4000 mhz 25 watt, 28 volt gan hemt gallium nitride 28v, 25w rf power transistor built using the sigantic ? nrf1 process - a proprietary gan-on-silicon technology rf specifcations (cw, 3000mhz): v ds = 28v, i dq = 225ma, t c = 25c, measured in nitronex test fixture symbol parameter min typ max units p 3db average output power at 3db gain compression 43 44 - dbm p 1db average output power at 1db gain compression - 43 - dbm g ss small signal gain 12 13 - db h drain effciency at 3db gain compression 57 65 - % vswr 10:1 vswr at all phase angles no damage to the device figure 1 - typical cw performance in load-pull, v ds = 28v, i dq = 225ma note 1: 500mhz and 900mhz load-pull data collected using a 4.7 resistor in the rf path added for stability figure 2 - typical cw performance 1 in load-pull, v ds = 28v, i dq = 225ma NPT1012 nds-025 rev. 3, april 2013
NPT1012 page 2 absolute maximum ratings: not simultaneous, t c = 25c unless otherwise noted symbol parameter min typ max units off characteristics v bds drain-source breakdown voltage (v gs = -8v, i d = 8ma) 100 - - v i dlk drain-source leakage current (v gs = -8v, v ds = 60v) - - 4 ma on characteristics v t gate threshold voltage (v ds = 28v, i d = 8ma) -2.3 -1.8 -1.3 v v gsq gate quiescent voltage (v ds = 28v, i d = 225ma) -2.0 -1.5 -1.0 v r on on resistance (v gs = 2v, i d = 60ma) - 0.44 0.55 w i d,max drain current (v ds = 7v pulsed, 300 m s pulse width, 0.2% duty cycle, v gs = 2.0v) - 5.4 - a symbol parameter max units v ds drain-source voltage 100 v v gs gate-source voltage -10 to 3 v i g gate current 40 ma p t total device power dissipation (derated above 25c) 44 w t stg storage temperature range -65 to 150 c t j operating junction temperature 200 c hbm human body model esd rating (per jesd22-a114) 1b (+/-500v) mm machine model esd rating (per jesd22-a115) a (>100v) cdm charge device model esd rating (per jesd22-c101) iv (>1000v) dc specifcations: t c = 25c symbol parameter min typ max units q jc thermal resistance (junction-to-case), t j = 180 c - 4.0 - c/w thermal resistance specifcation NPT1012 nds-025 rev. 3, april 2013
NPT1012 page 3 table 1: optimum source and load impedances 1 for cw gain, drain effciency, and output power performance load-pull data, reference plane at device leads v ds =28v, i dq =225ma, t a =25c unless otherwise noted figure 3 - optimum impedances for cw performance, v ds = 28v frequency (mhz) v ds (v) z s (w) z l (w) p sat (w) g ss (db) drain effciency @ p sat (%) 500 14 7.0 + j8.2 8.6 + j7.4 12 27.8 76 500 22 7.0 + j8.2 9.7+ j11.3 21 29.2 74 500 28 7.0 + j8.2 9.7 + j14.1 26 29.7 68 900 14 5.8 + j3.1 6.8 + j4.7 12 22.4 74 900 22 5.8 + j3.1 9.6 + j5.3 24 23.3 74 900 28 5.8 + j3.1 9.8 + j 7.8 26 23.6 67 1800 28 3.5 - j3.6 6.9 + j2.0 26 18.4 69 2500 14 3.9 - j7.5 6.2 - j8.0 13 13.7 70 2500 22 4.8 - j7.0 5.5 - j4.1 19 14.9 69 2500 28 4.8 - j7.0 5.5 - j4.1 26 15.2 69 3000 28 5.3 - j8.8 5.3 - j6.4 26 13.2 66 3500 28 5.0 - j14.5 7.0 - j9.5 26 12.9 63 note 1: 500mhz and 900mhz load-pull data collected using a 4.7 resistor in the rf path added for stability z s is the source impedance presented to the device. z l is the load impedance presented to the device. NPT1012 nds-025 rev. 3, april 2013
NPT1012 page 4 72% 43.5dbm figure 4 - load-pull contours 1 , 500mhz, p in = 14.5dbm, z s = 7.0 + j8.2 66% 44.0dbm note 1: 500mhz and 900mhz load-pull data collected using a 4.7 resistor in the rf path added for stability 72% 44.0dbm load-pull data, reference plane at device leads v ds =28v, i dq =225ma, t a =25c unless otherwise noted 69% 44.0dbm figure 5 - load-pull contours 1 , 900mhz, p in = 21.0dbm, z s = 5.8 + j3.1 figure 6 - load-pull contours, 1800mhz, p in = 26.5dbm, z s = 3.5 - j3.6 figure 7 - load-pull contours, 2500mhz, p in = 29.4dbm, z s = 4.8 - j7.0 NPT1012 nds-025 rev. 3, april 2013
NPT1012 page 5 load-pull data, reference plane at device leads v ds =28v, i dq =225ma, t a =25c unless otherwise noted 63% 44.0dbm 63% 44.0dbm figure 8 - load-pull contours, 3000mhz, p in = 31.7dbm, z s = 5.3 - j8.8 figure 9 - load-pull contours, 3500mhz, p in = 33.5dbm, z s = 5.0 - j14.5 figure 10 - typical cw performance in load-pull figure 11 - typical cw performance 1 over voltage in load-pull, 500mhz note 1: 500mhz and 900mhz load-pull data collected using a 4.7 resistor in the rf path added for stability NPT1012 nds-025 rev. 3, april 2013
NPT1012 page 6 figure 12 - typical cw performance 1 over voltage in load-pull, 900mhz figure 13 - typical cw performance over voltage in load-pull, 2500mhz figure 14 - typical cw performance over temperature in nitronex test fixture, 3000mhz figure 15 - quiescent gate voltage (v gsq ) required to reach i dq as a function of case temperature, v ds = 28v figure 16 - mttf of nrf1 devices as a function of junction temperature note 1: 500mhz and 900mhz load-pull data collected using a 4.7 resistor in the rf path added for stability load-pull data, reference plane at device leads v ds =28v, i dq =225ma, t a =25c unless otherwise noted figure 17 - power derating curve NPT1012 nds-025 rev. 3, april 2013
NPT1012 page 7 figure 18 - ac200b-2 metal-ceramic package dimensions and pinout (all dimensions are in inches [mm]) ordering information 1 part number description NPT1012b NPT1012 in ac200b-2 metal-ceramic bolt-down package 1: to fnd a nitronex contact in your area, visit our website at http://www.nitronex.com NPT1012 nds-025 rev. 3, april 2013
NPT1012 page 8 nitronex, llc 2305 presidential drive durham, nc 27703 usa +1.919.807.9100 (telephone) +1.919.807.9200 (fax) info@nitronex.com www.nitronex.com additional information this part is lead-free and is compliant with the rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). important notice nitronex, llc reserves the right to make corrections, modifcations, enhancements, improvements and other changes to its products and services at any time and to discontinue any product or service without notice. customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. all products are sold subject to nitronex terms and conditions of sale supplied at the time of order acknowledgment. the latest information from nitronex can be found either by calling nitronex at 1-919-807-9100 or visiting our website at www.nitronex.com. nitronex warrants performance of its packaged semiconductor or die to the specifcations applicable at the time of sale in accordance with nitronex standard warranty. testing and other quality control techniques are used to the extent nitronex deems necessary to support the warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. nitronex assumes no liability for applications assistance or customer product design. customers are responsible for their product and applications using nitronex semiconductor products or services. to minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. nitronex does not warrant or represent that any license, either express or implied, is granted under any nitronex patent right, copyright, mask work right, or other nitronex intellectual property right relating to any combination, machine or process in which nitronex products or services are used. reproduction of information in nitronex data sheets is permitted if and only if said reproduction does not alter any of the information and is accompanied by all associated warranties, conditions, limitations and notices. any alteration of the contained information invalidates all warranties and nitronex is not responsible or liable for any such statements. nitronex products are not intended or authorized for use in life support systems, including but not limited to surgical implants into the body or any other application intended to support or sustain life. should buyer purchase or use nitronex, llc products for any such unintended or unauthorized application, buyer shall indemnify and hold nitronex, llc, its of f cers, employees, subsidiaries, affliates, distributors, and its successors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, notwithstanding if such claim alleges that nitronex was negligent regarding the design or manufacture of said products. nitronex and the nitronex logo are registered trademarks of nitronex, llc. all other product or service names are the property of their respective owners. ? nitronex, llc 2012. all rights reserved. NPT1012 nds-025 rev. 3, april 2013
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